Work

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

Year: 2014

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2014.6856050

Authors: E. V. Brunt, S. T. Allen, A. A. Burk, J. W. Palmour, C. Scozzie, L. Cheng, M. O'Loughlin, C. Capell, C. Jonas, K. Lam, J. Richmond, V. Pala, S. Ryu

Institutions: Wolfspeed, Inc. (United States), DEVCOM Army Research Laboratory

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W1974447802

FWCI: 10.44

Cites: 4

Cited by: 84

Related to: 10