15 kV n-GTOs in 4H-SiC
Year: 2019
Type: article
Abstract: High performance 15 kV n-GTOs were demonstrated for the first time in 4H-SiC. The device utilized a 140 μm thick, lightly doped n-type drift layer, with 1450°C lifetime enhancement oxidation, which resulted in a carrier lifetime of 17.5 μs. The p+ backside injector layer was thinned to minimize parasitic resistances. A room temperature forward voltage drop of 5.18 V was observed at a current density of 100A/cm2. A 1 cm2 device showed a leakage current of 0.17 μA at 15 kV. The 4H-SiC n-GTO showed latching characteristics, and showed a turn-off time of 170 ns in a resistive load switching setup, which represents about a factor of 45 improvement in turn-off speed over 4H-SiC p-GTOs with comparable voltage and current ratings.
Source: Materials science forum
Authors: Sei Hyung Ryu, Daniel J. Lichtenwalner, Michael O’Loughlin, Craig Capell, Jim Richmond, Edward van Brunt, Charlotte Jonas, Yemane Lemma, Albert A. Burk, Brett Hull, Matthew McCain, Shadi Sabri, Heather O'Brien, Aderinto Ogunniyi, Aivars J. Lelis, Jeff Casady, David Grider, Scott Allen, John W. Palmour
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2964029979