A study of the chemical oxide/InP interface by deep-level transient spectroscopy
Year: 1987
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.339229
Authors: H. Ricard, G. Couturier, A. Chaouki, A. S. Barriere
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1970960280