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H. Ricard

Observed names: H. RICARD, Herve Ricard, Herve Ricard Herve Ricard
OpenAlex ID: A5031460733
Thin films of solid solutions of fluorides for epitaxy on III–V semiconductors
1986 · A.S. Barrière, G. Couturier, et al. · Surface Science · 15
A study of the chemical oxide/InP interface by deep-level transient spectroscopy
1987 · H. Ricard, G. Couturier, et al. · Journal of Applied Physics · 13
Electrical Properties of Gallium Fluoride(GaF3)/GaAs Interface with and without Sulfur Treatment
1990 · Herve Ricard, Kwang Ho Kim, et al. · Japanese Journal of Applied Physics · 12
Electrical properties of SrF2/InP (100) diodes and SrF2 thin films
1987 · G. Couturier, A. Chaouki, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 12
Improvement of interface electronic properties of GaF3/GaAs MIS structures
1992 · H. Ricard, K. Aizawa, et al. · Applied Surface Science · 6
Investigation of the CaF2/p-type Si(100) interface by conductance and deep level transient spectroscopy
1991 · G. Couturier, H. Ricard, et al. · Solid-State Electronics · 5
Lattice Parameter Control of Epitaxially Grown Hexagonal LaF3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF3
1992 · Kouji Aizawa, Herve Ricard Herve Ricard, et al. · Japanese Journal of Applied Physics · 3
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Electrical Properties of Gallium Fluoride (GaF3)/GaAs Interface with and without Sulfur Treatment
1990 · H. RICARD, K. H. KIM, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Studies of fluorides/sulfur-treated GaAs interfaces and their applications to MIS devices
1992 · H. Ricard
Electrical properties of rare-earth mixed-fluorides (Y x La 1-x F 3 )/GaAs structures.
1992 · 会沢康治, 神田和重, et al. · 応用物理学関係連合講演会講演予稿集
Thin films of solid solutions of fluorides for epitaxy on III–V semiconductors
1986 · A.S. Barrière, G. Couturier, et al. · Surface Science Letters
Works count: 11
Citation count: 67
H-index: 5
I10-index: 4
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