Work

Lattice Parameter Control of Epitaxially Grown Hexagonal LaF3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF3

Year: 1992

Type: article

Abstract: Control of lattice parameters of hexagonal LaF3 thin films has been attempted by incorporation of orthorhombic YF3, in order to realize lattice-matched epitaxial growth of the films on GaAs(111)B substrates. It has been found that the lattice parameter of the Y x La1-x F3 film is equivalently matched to that of GaAs(111) around the mixing ratio x of 0.55. It has also been found from Rutherford backscattering spectroscopy that the channeling minimum yield of the epitaxial films on GaAs(111)B substrates is relatively low (the best value is 0.36), when the mixing ratio of YF3 is close to that of the lattice matching condition.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.31.l508

Authors: Kouji Aizawa, Herve Ricard Herve Ricard, Hiroshi Ishiwara Hiroshi Ishiwara

Institution: Tokyo Institute of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2029536697

FWCI: 0.464

Cites: 5

Cited by: 3

Related to: 10