Work

O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

Year: 2009

Type: conference-paper

Source: European Solid-State Device Research Conference

DOI: 10.1109/essderc.2009.5331523

Authors: A. Rothschild, L. Breuil, G. Van den bosch, O. Richard, T. Conard, A. Franquet, A. Cacciato, I. Debusschere, M. Jurczak, J. Van Houdt, J. A. Kittl, U. Ganguly, L. Date, P. Boelen, R. Schreutelkamp

Institutions: IMEC, Applied Materials (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1972308472

FWCI: 4.216

Cites: 7

Cited by: 12

Related to: 10