Work

Temperature Dependence of Piezoelectric Properties of Sputtered Aluminum Nitride on Silicon Substrate

Year: 2006

Type: article

Abstract: We report for the first time the temperature dependence of the piezoelectric coefficient d33 of the aluminum nitride (AlN) film measured at temperatures up to 300 °C. A highly c-axis oriented AlN film was successfully deposited on a polycrystalline silicon / silicon dioxide / silicon wafer by a reactive sputtering technique to form a piezoelectric uni-morph actuator. A scanning laser Doppler vibrometer was used to measure the picometer level displacement of the actuator at 20 kHz at different temperatures. The piezoelectric coefficient d33 has a constant value of 5 pC/N at temperatures ranging between 20 °C and 300 °C.

Source: IEEJ Transactions on Sensors and Micromachines

DOI: 10.1541/ieejsmas.126.158

Authors: Kazuhiko Kano, Kazuki Arakawa, Yukihiro Takeuchi, Morito Akiyama, Naohiro Ueno, Toshihiro Kamohara, Nobuaki Kawahara

Institutions: Denso (Japan), National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Acoustic Wave Resonator Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1973014769

FWCI:

Cites: 9

Cited by: 2

Related to: 10