Year: 2005
Type: article
Abstract: Distributed Bragg reflectors (DBRs) composed of an AlN∕AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si∕AlN interface. For a 9× DBR, the measured peak reflectance of 96.8% actually exceeded the theoretical value of 96.1%. The AlN∕AlGaN superlattice served the added purpose of compensating for the large tensile strain developed during the growth of a crack-free 500nm GaN∕7× DBR/Si structure. This achievement opens the possibility to manufacture high-quality III-nitride optoelectronic devices without optical absorption in the opaque Si substrate.
Source: Applied Physics Letters
DOI: 10.1063/1.2140874
Institution: United States Naval Research Laboratory
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1976967809