2005 · H. J. Park, C. Park, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 26

Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

2003 · M.A. Mastro, D. Tsvetkov, et al. · Solid-State Electronics · 24

Indium‐free violet LEDs grown by HVPE

2003 · A. S. Usikov, D. V. Tsvetkov, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 19

Dielectric-substrate-induced surface-enhanced Raman scattering

2009 · O. J. Glembocki, R. W. Rendell, et al. · Physical Review B · 17

RF performance of HVPE-grown AlGaN/GaN HEMTs

2003 · M.A. Mastro, D. Tsvetkov, et al. · Solid-State Electronics · 13

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

2007 · Y. N. Picard, M. E. Twigg, et al. · Applied Physics Letters · 11

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

2007 · M.A. Mastro, J.A. Freitas, et al. · Applied Surface Science · 10

AlGaN/GaN Structures Grown by HVPE: Growth and Characterization

2003 · M.A. Mastro, D.V. Tsvetkov, et al. · MRS Proceedings · 10

Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method

2008 · M.A. Mastro, J.A. Freitas, et al. · Physica E Low-dimensional Systems and Nanostructures · 8

Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates

2010 · R. L. Myers-Ward, B. L. VanMil, et al. · Journal of Applied Physics · 6

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

2003 · J.K. Gillespie, R.C. Fitch, et al. · Solid-State Electronics · 6

GaN Substrates: Growth and Characterization

1999 · O. Kryliouk, M. Reek, et al. · physica status solidi (a) · 5

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Transverse-microcavity modulation of photoluminescence from GaN nanowires

2010 · J. P. Long, R. A. Flynn, et al. · Applied Physics Letters · 3

X-ray diffraction study of crystal plane distortion in silicon carbide substrates

2006 · M. A. Mastro, M. Fatemi, et al. · Journal of Applied Physics · 3

Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire‐based templates

2003 · A. S. Usikov, Dae‐Woo Kim, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 3

Lattice constant variation in GaN:Si layers grown by HVPE

2002 · A. Usikov, O. V. Kovalenkov, et al. · MRS Proceedings · 3

Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system

2005 · M.A. Mastro, O.M. Kryliouk, et al. · Materials Science and Engineering B · 2

HVPE-GROWN AlGaN/GaN HEMTs

2003 · B. Luo, F. Ren, et al. · MRS Proceedings · 2

Works count: 30

Citation count: 495

H-index: 12

I10-index: 15