Work

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

Year: 2003

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(03)00140-0

Authors: J.K. Gillespie, R.C. Fitch, N. Moser, T. Jenkins, J. Sewell, D. Via, A. Crespo, A.M. Dabiran, P.P. Chow, A. Osinsky, M.A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, S.J. Pearton, F. Ren

Institutions: Wright-Patterson Air Force Base, U.S. Air Force Research Laboratory Sensors Directorate, SVT Associates (United States), University of Florida

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2044086453

FWCI: 0.629

Cites: 25

Cited by: 6

Related to: 10