Work

Influence of polarity on GaN thermal stability

Year: 2004

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2004.09.091

Authors: M.A. Mastro, O.M. Kryliouk, T.J. Anderson, A. Davydov, A. Shapiro

Institutions: University of Florida, National Institute of Standards and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

OpenAlex ID: W2005127621

FWCI: 1.22

Cites: 18

Cited by: 55

Related to: 10