Work

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Year: 2007

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2754638

Authors: Y. N. Picard, M. E. Twigg, M. A. Mastro, C. R. Eddy, R. L. Henry, R. T. Holm, P. G. Neudeck, A. J. Trunek, J. A. Powell

Institutions: Naval Research Laboratory Electronics Science and Technology Division, Glenn Research Center, Ohio Aerospace Institute, Sest (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1993511069

FWCI: 0.682

Cites: 22

Cited by: 11

Related to: 10