Work

One-dimensional writing model of n-channel floating gate ionization-injection MOS (FIMOS)

Year: 1981

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1981.20510

Authors: S. Tanaka, M. Ishikawa

Institution: Toshiba (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978208666

FWCI: 3.923

Cites: 18

Cited by: 36

Related to: 10