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M. Ishikawa

Observed name: Masaoki Ishikawa
Institution: NEC (Japan)
Observed institutions: NEC (Japan), Toshiba (Japan)
OpenAlex ID: A5089936730
One-dimensional writing model of n-channel floating gate ionization-injection MOS (FIMOS)
1981 · S. Tanaka, M. Ishikawa · IEEE Transactions on Electron Devices · 36
0.6 V suppy voltage 0.25 μm E/D-HJFET(IS/sup 3/T) LSI technology for low power consumption and high speed LSIs
2002 · H. Hida, M. Tokushima, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 20
Submicron CMOS technologies for four mega bit dynamic RAM
1985 · H. Ishiuchi, T. Watanabe, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
An ultra-low-power-consumption high-speed GaAs quasi-differential switch flip-flop (QD-FF)
1996 · T. Maeda, K. Numata, et al. · IEEE Journal of Solid-State Circuits · 14
An ultralow-power-consumption, high-speed, GaAs 256/258 dual-modulus prescaler IC
1999 · T. Maeda, S. Wada, et al. · IEEE Journal of Solid-State Circuits · 12
A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs
2002 · T. Maeda, K. Numata, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 11
Stacked-Gate Avalanche-Injection Type MOS (SAMOS) Memory
1972 · H. Iizuka, T. Sato, et al. · International Conference on Solid State Devices and Materials (SSDM) · 11
A GaAs 12 × 12 bit expandable parallel multiplier LSI using sidewall-assisted closely-spaced electrode technology
1984 · T. Furutsuka, K. Takahashi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
A 27/GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1 μm double-deck-shaped (DDS) gate E/D-HJFETs
2002 · S. Wada, T. Maeda, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 7
Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs
1983 · Asamitsu Higashisaka, Masaoki Ishikawa, et al. · International Conference on Solid State Devices and Materials (SSDM) · 7
An 0.1-μm voidless double-deck-shaped (DDS) gate HJFET with reduced gate-fringing-capacitance
1999 · S. Wada, J. Yamazaki, et al. · IEEE Transactions on Electron Devices · 6
An ultra-low-power-consumption high-speed GaAs 256/258 dual-modulus prescaler IC
2002 · T. Maeda, S. Wada, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 5
Ultra low power consumption heterojunction FET 8:1 MUX/1:8 DEMUX for 2.4 Gbps optical fiber communication systems
2002 · K. Numata, M. Fujii, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 4
A 0.1-μm double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs
2002 · S. Wada, J. Yamazaki, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 3
A high-speed low-power tri-state driver flip flop for ultra-low supply voltage GaAs heterojunction FET LSI's
1996 · T. Maeda, K. Numata, et al. · IEEE Journal of Solid-State Circuits · 3
Characterization of MoSi2-gate buried channel MOSFET's for a 256K-bit dynamic RAM
1981 · T. Tanaka, H. Ishiuchi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
An ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage
2005 · M. Fujii, T. Maeda, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 2
A GaAs buffering circuit LSI for ultra-fast data processing systems
2003 · T. Maeda, Y. Miyatake, et al. · 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. · 1
A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fiber communication systems using n-AlGaAs/i-InGaAs HJFET's
1998 · M. Fujii, K. Numata, et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 1
A technique for compensating for temperature variation in low-supply-voltage GaAs DCFL circuits
1996 · Tadashi Maeda, Keiichi Numata, et al. · Solid-State Electronics · 1
Low power consumption 16:1 MUX/DMUX for the STM-16 transmission systems based on DMT DCFL circuits
1992 · Masahiro Fujii, Masatoshi Tokushima, et al. · Nec Research & Development · 1
0.21-fJ GaAs DCFL Circuits Using 0.2-ìm Y-Shaped Gate AIGaAs/InGaAs E/D-HJFETs
1999 · Shigeki Wada, Masatoshi Tokushima, et al.
An Ultra-low Power-consumption High-speed GaAs 256/258 Dual-modulus Prescaler IC
1997 · Tadashi Maeda, Shigeki Wada, et al. · 電子情報通信学会技術研究報告. MW, マイクロ波
A 1. 3 V supply voltage AIGaAs/lnGaAs HJFET SCFL D-FF operating at up to 10 gbps
1996 · Masahiro Fujii, Tadashi Maeda, et al. · IEICE Transactions on Electronics
Ultra-Low-Power-Consumption Heterojunction FET 8:1 MUX/1:8 DEMUX for 2.4-Gb/s Optical Fiber Communication Systems
1995 · K. Numata, Masahiro Fujii, et al. · Proceedings of the Society Conference of IEICE
Works count: 31
Citation count: 172
H-index: 8
I10-index: 7
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