Work

0.21-fJ GaAs DCFL Circuits Using 0.2-ìm Y-Shaped Gate AIGaAs/InGaAs E/D-HJFETs

Year: 1999

Type: article

Authors: Shigeki Wada, Masatoshi Tokushima, M. Ishikawa, Nobuhide Yoshida, Masahiro Fujii, Tadashi Maeda

Institution: NEC (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W5085313

FWCI:

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Related to: 10