Low-Temperature Growth of SiO2 Films by Electron-Induced Ultrahigh Vacuum Chemical Vapor Deposition
Year: 1996
Type: article
Abstract: Room temperature growth of SiO2 films was carried out using the method of electron-induced ultrahigh vacuum chemical vapor deposition with disilane ( Si2H6) and oxygen ( O2). The films were grown selectively on a Si(100) surface irradiated by an electron beam with an energy of 0.6–17 keV and a current density of 0.03–2.7 mA/cm2. The [O2]/[Si2H6] gas mixing ratio of 2 was most effective for obtaining the highest growth rate of the films. From the results of film characterization by refractive index, stoichiometry and catastrophic breakdown electric field measurements, we found that the films are much the same as thermally oxidized SiO2 films. Dependence of the growth rate on the incident angle of the electron beam on a surface and on the primary electron energy suggested that the growth kinetics of the SiO2 films are managed by an amount of secondary electrons generated from the film surface.
DOI: 10.1143/jjap.35.6570
Authors: Koji Nakano, Tetsuhiro Horie Tetsuhiro Horie, Hitoshi Sakamoto Hitoshi Sakamoto
Institution: Mitsubishi Heavy Industries (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1978422040