Work

Numerical simulation of intrinsic defects in SiO2 and Si3N4

Year: 2001

Type: article

Source: Semiconductors

DOI: 10.1134/1.1403563

Authors: V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, Yu. N. Morokov

Institutions: Russian Academy of Sciences, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics, Federal Research Center for Information and Computational Technologies

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978728654

FWCI:

Cites: 36

Cited by: 31

Related to: 10