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A. V. Shaposhnikov
Observed names:
A. Shaposhnikov,
A.V. SHAPOSHNIKOV,
A.V. Shaposhnikov,
Alexandr V Shaposhnikov
Institutions:
Russian Academy of Sciences,
Siberian Branch of the Russian Academy of Sciences,
Institute of Semiconductor Physics
Observed institutions:
Russian Academy of Sciences,
Siberian Branch of the Russian Academy of Sciences,
Institute of Semiconductor Physics
OpenAlex ID:
A5067255641
Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment
2007
·
T. V. Perevalov
, A. V. Shaposhnikov
, et al.
·
Journal of Experimental and Theoretical Physics Letters
·
106
Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps
2012
·
A. V. Shaposhnikov
, T. V. Perevalov
, et al.
·
Applied Physics Letters
·
81
Electronic structure of memory traps in silicon nitride
2009
·
V.A. Gritsenko
, S.S. Nekrashevich
, et al.
·
Microelectronic Engineering
·
74
Electronic band structure and effective masses of electrons and holes in the α and β phases of silicon nitride
2007
·
A. V. Shaposhnikov
, I. P. Petrov
, et al.
·
Physics of the Solid State
·
44
Numerical simulation of intrinsic defects in SiO2 and Si3N4
2001
·
V. A. Gritsenko
, Yu. N. Novikov
, et al.
·
Semiconductors
·
31
Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces
2003
·
Vladimir A Gritsenko
, Alexandr V Shaposhnikov
, et al.
·
Thin Solid Films
·
30
The atomic and electron structure of ZrO2
2006
·
A. V. Shaposhnikov
, D. V. Gritsenko
, et al.
·
Journal of Experimental and Theoretical Physics
·
28
Electronic structure of bulk and defect α- and γ-Al2O3
2009
·
T.V. Perevalov
, A.V. Shaposhnikov
, et al.
·
Microelectronic Engineering
·
22
Onefold coordinated oxygen atom: an electron trap in the silicon oxide
2003
·
V.A. Gritsenko
, A.V. Shaposhnikov
, et al.
·
Microelectronics Reliability
·
14
Ab initio simulation of the electronic structure of Ta2O5 crystal modifications
2013
·
T. V. Perevalov
, A. V. Shaposhnikov
·
Journal of Experimental and Theoretical Physics
·
13
Electronic Structure of Zro2 and Hfo2
2006
·
T.V. PEREVALOV
, A.V. SHAPOSHNIKOV
, et al.
·
Kluwer Academic Publishers eBooks
·
11
Capturing properties of a threefold coordinated silicon atom in silicon nitride: Positive correlation energy model
2003
·
V. A. Gritsenko
, Yu. N. Novikov
, et al.
·
Physics of the Solid State
·
9
Two fold coordinated silicon atom: a hole trap in SiO2
2002
·
V.A. Gritsenko
, A.V. Shaposhnikov
, et al.
·
Solid State Communications
·
9
Study of the atomic and electronic structures of amorphous silicon nitride and defects in it
2011
·
S. S. Nekrashevich
, A. V. Shaposhnikov
, et al.
·
Journal of Experimental and Theoretical Physics Letters
·
7
Hole trapping on the twofold-coordinated silicon atom in SiO2
2002
·
A. V. Shaposhnikov
, V. A. Gritsenko
, et al.
·
Physics of the Solid State
·
6
Numerical study of one-fold coordinated oxygen atom in silicon gate oxide
2003
·
V.A. Gritsenko
, A. Shaposhnikov
, et al.
·
IEEE Hong Kong Electron Devices Meeting
·
1
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Works count:
16
Citation count:
486
H-index:
11
I10-index:
11
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