Work

Electronic structure of α-Al2O3: Ab initio simulations and comparison with experiment

Year: 2007

Type: article

Source: Journal of Experimental and Theoretical Physics Letters

DOI: 10.1134/s0021364007030071

Authors: T. V. Perevalov, A. V. Shaposhnikov, V. A. Gritsenko, H. Wong, J. H. Han, C. W. Kim

Institutions: Russian Academy of Sciences, Institute of Semiconductor Physics, City University of Hong Kong, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W98735122

FWCI: 2.378

Cites: 15

Cited by: 106

Related to: 10