Work

Electronic band structure and effective masses of electrons and holes in the α and β phases of silicon nitride

Year: 2007

Type: article

Source: Physics of the Solid State

DOI: 10.1134/s1063783407090041

Authors: A. V. Shaposhnikov, I. P. Petrov, V. A. Gritsenko, C. W. Kim

Institutions: Russian Academy of Sciences, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Russian Foundation for Basic Research, Russian Academy of Sciences

OpenAlex ID: W2017516461

FWCI: 0.227

Cites: 7

Cited by: 44

Related to: 10