Work

Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions

Year: 2014

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4868538

Authors: S. M. Knoll, S. K. Rhode, S. Zhang, T. B. Joyce, M. A. Moram

Institutions: University of Cambridge, Imperial College London, University of Liverpool

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

Award: Multifunctional III-nitride materials

OpenAlex ID: W1978761246

FWCI: 1.618

Cites: 30

Cited by: 23

Related to: 10