Author

Timothy B. Joyce

Observed names: Joyce, Timothy Bruce Frank, T B Joyce, T. B. F. Joyce, T. B. Joyce, T.B Joyce, T.B. Joyce, T.B.F. Joyce

Observed institutions: University of Liverpool, Lawrence Berkeley National Laboratory, Fraunhofer Institute for Applied Solid State Physics, Imperial College London, University of California, Berkeley

OpenAlex ID: A5111750719

Transition from electron accumulation to depletion at InGaN surfaces

2006 · T. D. Veal, P. H. Jefferson, et al. · Applied Physics Letters · 100

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Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon

2006 · M. A. Moram, Z. H. Barber, et al. · Journal of Applied Physics · 55

A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy

1995 · R. Beanland, M. Aindow, et al. · Journal of Crystal Growth · 52

Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices

2004 · S. Davies, T. S. Huang, et al. · Applied Physics Letters · 50

Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer

2007 · M.A. Moram, M.J. Kappers, et al. · Journal of Crystal Growth · 45

Di-Carbon Defects in Annealed Highly Carbon Doped GaAs

1997 · J. Wagner, R. C. Newman, et al. · Physical Review Letters · 44

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Photoreflectance characterization of OMVPE GaAs on Si

1988 · N. Bottka, D.K. Gaskill, et al. · Journal of Crystal Growth · 43

CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors

1992 · T.B. Joyce, T.J. Bullough, et al. · Journal of Crystal Growth · 42

S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides

2003 · S. Mazzucato, R.J. Potter, et al. · Physica E Low-dimensional Systems and Nanostructures · 40

Dynamics of the H- CAs complex in GaAs

1993 · B. R. Davidson, R. C. Newman, et al. · Physical review. B, Condensed matter · 39

Microstructure of epitaxial scandium nitride films grown on silicon

2006 · M.A. Moram, T.B. Joyce, et al. · Applied Surface Science · 36

Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy

2009 · M. A. Moram, Y. Zhang, et al. · Journal of Applied Physics · 32

Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices

1999 · P.R Chalker, T.B Joyce, et al. · Diamond and Related Materials · 29

Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy

2004 · M. H. Gass, A. J. Papworth, et al. · Applied Physics Letters · 27

The structure and vibrational modes of H-CAspairs in passivated AlAs grown by chemical beam epitaxy

1994 · R E Pritchard, B R Davidson, et al. · Semiconductor Science and Technology · 26

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Beam equivalent pressure measurements in chemical beam epitaxy

1993 · T.B. Joyce, T.J. Bullough · Journal of Crystal Growth · 25

Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity

1992 · J.V. Armstrong, T. Farrell, et al. · Journal of Crystal Growth · 25

Carbon acceptors passivated with hydrogen and the search for carbon donors in highly doped GaAs:C

1993 · M J Ashwin, B R Davidson, et al. · Semiconductor Science and Technology · 24

Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions

2014 · S. M. Knoll, S. K. Rhode, et al. · Applied Physics Letters · 23

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1−xAs1−yNy/GaAs laser structures

2001 · R. Potter, S. Mazzucato, et al. · Superlattices and Microstructures · 23

Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring

1996 · T.B. Joyce, S.P. Westwater, et al. · Journal of Crystal Growth · 23

Compositional variation in as-grown GaInNAs/GaAs quantum well structures

2001 · P.R Chalker, H Davock, et al. · Journal of Crystal Growth · 21

Local vibrational modes in GaAs under hydrostatic pressure

1997 · M. D. McCluskey, E. E. Haller, et al. · Physical review. B, Condensed matter · 21

Dynamics of the H- CAs complex in GaAs determined from Raman measurements

1995 · J. Wagner, K. H. Bachem, et al. · Physical review. B, Condensed matter · 21

Growth, microstructure and morphology of epitaxial ScGaN films

2011 · S. M. Knoll, S. Zhang, et al. · physica status solidi (a) · 19

Works count: 81

Citation count: 1,166

H-index: 21

I10-index: 35