Year: 1997
Type: article
Abstract: Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and $1674\mathrm{cm}{}^{\ensuremath{-}1}$ in GaAs codoped with ${}^{12}$C and ${}^{13}$C after annealing at 850 \ifmmode^\circ\else\textdegree\fi{}C with concomitant loss of vibrational scattering from ${\mathrm{C}}_{\mathrm{As}}$. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced ${\mathrm{C}}_{\mathrm{As}}$) atom by an undisplaced ${\mathrm{C}}_{\mathrm{As}}$ acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and $1788\mathrm{cm}{}^{\ensuremath{-}1}$ from a different C-C complex.
Source: Physical Review Letters
Authors: J. Wagner, R. C. Newman, B. R. Davidson, S. P. Westwater, T. J. Bullough, T. B. Joyce, C. D. Latham, R. Jones, S. Öberg
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1990297979