Work

Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer

Year: 2007

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2007.09.009

Authors: M.A. Moram, M.J. Kappers, T.B. Joyce, P.R. Chalker, Z.H. Barber, C.J. Humphreys

Institutions: University of Cambridge, University of Liverpool

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

Awards: Optimising GaN light emitting structures on free-standing GaN substrates, Materials Challenges in GaN-based Light Emitting Structures

OpenAlex ID: W1978992835

FWCI: 1.832

Cites: 18

Cited by: 45

Related to: 10