Work

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

Year: 1985

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1985.21939

Authors: S.D.S. Malhi, H. Shichijo, S.K. Banerjee, R. Sundaresan, M. Elahy, G.P. Pollack, W.F. Richardson, A.H. Shah, L.R. Hite, R.H. Womack, P.K. Chatterjee, H.W. Lam

Institution: Texas Instruments (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1980426541

FWCI: 23.35

Cites: 58

Cited by: 190

Related to: 10