Author

S. Banerjee

Observed names: S K Banerjee, S. K. Banerjee, S.K. Banerjee

Institutions: Harvard University, University of Colorado Boulder, Joint Quantum Institute, University of Maryland, College Park, The University of Texas at Austin

Observed institutions: Motorola (United States), Harvard University, University of Colorado Boulder, Joint Quantum Institute, University of Maryland, College Park, Texas Instruments (United States), The University of Texas at Austin

ORCID: 0009-0002-5559-4806

Observed ORCID: 0009-0002-5559-4806

OpenAlex ID: A5111972078

Anomalous leakage current in LPCVD PolySilicon MOSFET's

1985 · J.G. Fossum, A. Ortiz-Conde, et al. · IEEE Transactions on Electron Devices · 293

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

1985 · S.D.S. Malhi, H. Shichijo, et al. · IEEE Transactions on Electron Devices · 190

A new three-terminal tunnel device

1987 · S. Banerjee, W. Richardson, et al. · IEEE Electron Device Letters · 145

Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

1984 · G.P. Pollack, W.F. Richardson, et al. · IEEE Electron Device Letters · 86

Hot-electron degradation of n-channel polysilicon MOSFETs

1988 · S. Banerjee, R. Sundaresan, et al. · IEEE Transactions on Electron Devices · 56

A trench transistor cross-point DRAM cell

1985 · W.F. Richardson, D.M. Bordelon, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 47

Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFET's

1994 · S.S. Bhattacharya, S.K. Banerjee, et al. · IEEE Transactions on Electron Devices · 35

Evidence for hydrogen two-level systems in atomic layer deposition oxides

2013 · M. S. Khalil, M. J. A. Stoutimore, et al. · Applied Physics Letters · 31

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Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence

2010 · D. Basu, L. F. Register, et al. · Physical Review B · 24

Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon

1985 · S.D.S. Malhi, H. Shichijo, et al. · IEEE Journal of Solid-State Circuits · 23

Low-temperature growth of GexSi1−x/Si heterostructures on Si(100) by remote plasma-enhanced chemical vapor deposition

1991 · D. Kinosky, R. Qian, et al. · Applied Physics Letters · 19

System-in-a-package integration of SAW RF Rx filter stacked on a transceiver chip

2005 · R.E. Jones, C. Ramiah, et al. · IEEE Transactions on Advanced Packaging · 17

Trench capacitor leakage in Mbit DRAMs

1984 · M. Elahy, H. Shichijo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15

Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal oxide semiconductor field-effect transistors

2002 · G S Kar, S Maikap, et al. · Semiconductor Science and Technology · 14

Integration of in situ spectral ellipsometry with MMST machine control

1994 · S. Maung, S. Banerjee, et al. · IEEE Transactions on Semiconductor Manufacturing · 11

Electrical characterization of Si/Si1−xGex/Si quantum well heterostructures using a MOS capacitor

2000 · S. Maikap, L.K. Bera, et al. · Solid-State Electronics · 7

Characterization of Trench Transistors for 3-D Memories

1986 · S. Banerjee, H. Shichujo, et al. · Symposium on VLSI Technology · 7

Charge trapping characteristics of ultrathin oxynitrides on Si/Si1−x−yGexCy/Si heterolayers

2001 · S.K. Ray, S. Maikap, et al. · Solid-State Electronics · 6

Electrical characteristics of plasma oxidized Si1−x−yGexCy metal–oxide–semiconductor capacitors

1998 · S. K. Ray, L. K. Bera, et al. · Applied Physics Letters · 6

Polysilicon transistors in VLSI MOS memories

1984 · H. Shichijo, S.D.S. Malhi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6

VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications

1984 · S.K. Banerjee, M. Elahy, et al. · IEEE Transactions on Electron Devices · 4

Magnetic-field effects on Coulomb blockade conductance oscillations in a normal metal-insulator-normal metal double-barrier tunnel junction formed using atomic force microscope nanolithography

2005 · J. C. Wiemeri, T. A. Spencer, et al. · Journal of Applied Physics · 2

Novel, high-performance polysilicon heterostructure TFTs using P-I-N source/drains

2002 · I. Manna, K.-C. Liu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2

Integration of SAW RF Rx filter stacked on a transceiver chip in a QFN package

2004 · R.E. Jones, C. Ramiah, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 1

Top-gate Ge-Si$_{x}$Ge$_{1-x}$ core-shell nanowire field effect transistors with highly doped source and drain.

2009 · Junghyo Nah, E.-S. Liu, et al. · Bulletin of the American Physical Society

Works count: 29

Citation count: 1,047

H-index: 14

I10-index: 15