Work

Electrical characterization of Si/Si1−xGex/Si quantum well heterostructures using a MOS capacitor

Year: 2000

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(99)00327-5

Authors: S. Maikap, L.K. Bera, S.K. Ray, S. John, S.K. Banerjee, C.K. Maiti

Institutions: Indian Institute of Technology Kharagpur, Texas Instruments (United States), The University of Texas at Austin

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2002147104

FWCI: 1.268

Cites: 39

Cited by: 7

Related to: 10