Work

VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications

Year: 1984

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1984.21881

Authors: S.K. Banerjee, M. Elahy, H. Shichijo, G.P. Pollack, W.F. Richardson, S.D.S. Malhi, A.H. Shah, P.K. Chatterjee, H.W. Lam, R.H. Womack

Institution: Texas Instruments (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2046360952

FWCI: 2.301

Cites:

Cited by: 4

Related to: 10