Work

Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

Year: 1984

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/edl.1984.25991

Authors: G.P. Pollack, W.F. Richardson, S.D.S. Malhi, T. Bonifield, H. Shichijo, S. Banerjee, M. Elahy, A.H. Shah, R. Womack, P.K. Chatterjee

Institution: Texas Instruments (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017555277

FWCI: 6.903

Cites: 6

Cited by: 86

Related to: 10