Work

Activation of ion implanted Si for backside processing by ultra-fast laser thermal annealing: Energy homogeneity and micro-scale sheet resistance

Year: 2009

Type: conference-paper

Source: International Conference on Advanced Thermal Processing of Semiconductors

DOI: 10.1109/rtp.2009.5373465

Authors: K. Huet, R. Lin, C. Boniface, F. Desse, D. H. Petersen, O. Hansen, N. Variam, A. La Magna, M. Schuhmacher, A. Jensen, P.F. Nielsen, H. Besaucele, J. Venturing

Institutions: Cameca (United States), Technical University of Denmark, Institute for Microelectronics and Microsystems

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1982034483

FWCI: 0.937

Cites: 20

Cited by: 5

Related to: 10