2012 · Shiyu Sun, Shankar Muthukrishnan, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5

Activation of ion implanted Si for backside processing by ultra-fast laser thermal annealing: Energy homogeneity and micro-scale sheet resistance

2009 · K. Huet, R. Lin, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 5

Performance Characteristics of 65nm PFETs Using Molecular Implant Species for Source and Drain Extensions

2008 · Chung Foong Tan, L. W. Teo, et al. · MRS Proceedings · 5

Impact of N2 Coimplant on Phosphorus Diffusion and Activation for n+/p Ge Junctions

2020 · Sachin Dev, Nilay Pradhan, et al. · IEEE Transactions on Electron Devices · 4

Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

2016 · Y. Kikuchi, T. Hopf, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4

NMOS contact resistivity reduction with implants into silicides

2013 · K. V. Rao, Fareen Adeni Khaja, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4

NMOS contact resistance reduction with selenium implant into NiPt silicide

2012 · K. V. Rao, F. A. Khaja, et al. · AIP conference proceedings · 4

Silicon: Carbon Source/Drain Stressors: Integration of a Novel Nickel Aluminide-Silicide and Post-Solid-Phase-Epitaxy Anneal for Reduced Schottky-Barrier and Leakage

2009 · Shao Ming Koh, Wei-Jing Zhou, et al. · ECS Transactions · 4

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Beam incidence angle control advantages of high-current single wafer implanters

2002 · A. Bertuch, N. Variam, et al. · International Conference on Ion Implantation Technology · 4

Selenium segregation optimization for 10 nm node contact resistivity

2014 · C.-N. Ni, K.V. Rao, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 3

Schottky barrier height tuning using P+ DSS for NMOS contact resistance reduction

2012 · Fareen Adeni Khaja, K. V. Rao, et al. · AIP conference proceedings · 3

Strained n-Channel Field-Effect Transistors with Channel Proximate Silicon–Carbon Source/Drain Stressors for Performance Enhancement

2010 · Shao-Ming Koh, Hoong-Shing Wong, et al. · Journal of The Electrochemical Society · 3

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Enhancing tensile stress and source/drain activation with Si:C with innovations in ion implant and millisecond laser spike annealing

2008 · Helen Maynard, Christopher Hatem, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 3

Product wafer monitoring of ultrashallow channel implants with an elastic metal gate

2002 · Robert J. Hillard, William H. Howland, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 3

Meeting the well doping requirement of sub 100nm devices - process performance characteristics of the VIISta 3000 implanter

2002 · S. Norasetthekul, B.N. Guo, et al. · International Conference on Ion Implantation Technology · 3

Works count: 52

Citation count: 283

H-index: 8

I10-index: 7