Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium
Year: 2018
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.5028045
Institution: Indian Institute of Technology Bombay
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2804909690