Work

Growth of ternary alloy Si1−x−yGexCy by rapid thermal chemical vapor deposition

Year: 1995

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/1.579518

Authors: S. Bodnar, J. L. Regolini

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1982910395

FWCI: 5.557

Cites:

Cited by: 34

Related to: 10