Author

Jorge Luis Regolini

Observed names: J-L. Regolini, J. L. REGOLINI, J. L. Regolini, J. L. Régolini, J. Regolini, J.-L. Regolini, J.L Regolini, J.L. Regolini, Jorge L. Regolini, Jorge Regolini, Jorge-Luis REGOLINI, Regolini

Observed institutions: Centre National de la Recherche Scientifique, Universidad Nacional de Cuyo, Palo Alto Research Center, Orange (France), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Balseiro Institute, Bariloche Atomic Centre, CEA Grenoble, STMicroelectronics (France), Institut National de Physique Nucléaire et de Physique des Particules, Laboratoire d'Électronique des Technologies de l'Information, Institut National des Sciences Appliquées de Lyon, Université de Strasbourg, Comisión Nacional de Energía Atómica, Stanford University

OpenAlex ID: A5110176417

Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

2000 · M. Jurczak, T. Skotnicki, et al. · IEEE Transactions on Electron Devices · 219

Band-edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCy alloys

1994 · P. Boucaud, C. Francis, et al. · Applied Physics Letters · 102

Growth and characterization of strain compensated Si1−x−y epitaxial layers

1993 · J.L. Regolini, F. Gisbert, et al. · Materials Letters · 88

Passivation issues in active pixel CMOS image sensors

2007 · J.L. Regolini, D. Benoit, et al. · Microelectronics Reliability · 79

Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

1989 · J. L. Regolini, D. Bensahel, et al. · Applied Physics Letters · 66

Selective Si and SiGe epitaxial heterostructures grown using an industrial low-pressure chemical vapor deposition module

1997 · S. Bodnar, E. de Berranger, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 64

Scanning-electron-beam annealing of arsenic-implanted silicon

1979 · J. L. Regolini, J. F. Gibbons, et al. · Applied Physics Letters · 59

Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors

2007 · D. Benoit, J. Regolini, et al. · Microelectronic Engineering · 57

Porous silicon: material properties, visible photo- and electroluminescence

1993 · G. Bomchil, A. Halimaoui, et al. · Applied Surface Science · 57

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

1999 · S. Jouan, R. Planche, et al. · IEEE Transactions on Electron Devices · 56

Selective and epitaxial deposition of β-FeSi2 on silicon by rapid thermal processing-chemical vapor deposition using a solid iron source

1992 · J. L. Regolini, F. Trincat, et al. · Applied Physics Letters · 52

SON (silicon on nothing)-a new device architecture for the ULSI era

1999 · M. Jurczak, T. Skotnicki, et al. · Symposium on VLSI Technology · 51

Photoluminescence of strained Si1−yCy alloys grown at low temperature

1995 · P. Boucaud, C. Francis, et al. · Applied Physics Letters · 49

Strain compensated heterostructures in the Si1−x−yGexCy ternary system

1994 · J. L. Regolini, S. Bodnar, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 47

Metal Silicon Reactions Induced by CW Scanned Laser and Electron Beams

1981 · T. Shibata, T. W. Sigmon, et al. · Journal of The Electrochemical Society · 44

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

2010 · F. Domengie, J. L. Regolini, et al. · Journal of Electronic Materials · 42

Characterization of semiconducting iron disilicide obtained by LRP/CVD

1992 · J. Regolini, F. Trincat, et al. · IEEE Transactions on Electron Devices · 40

Determination of the Conversion Factor for Infrared Measurements of Carbon in Silicon

1986 · J. L. Regolini, J. P. Stoquert, et al. · Journal of The Electrochemical Society · 39

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Growth of ternary alloy Si1−x−yGexCy by rapid thermal chemical vapor deposition

1995 · S. Bodnar, J. L. Regolini · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 34

Silicon selective epitaxial growth at reduced pressure and temperature

1989 · J.L. Regolini, D. Bensahel, et al. · Journal of Crystal Growth · 29

A high performance low complexity SiGe HBT for BiCMOS integration

2002 · A. Chantre, M. Marty, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 28

Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor

1989 · J.L. Regolini, D. Bensahel, et al. · Applied Surface Science · 27

Rapid thermal oxidation of silicon monoxide

1987 · E. Fogarassy, A. Slaoui, et al. · Applied Physics Letters · 27

Metastable 75As concentrations formed by scanned cw e-beam annealing of 75As-implanted silicon

1979 · J. L. Regolini, T. W. Sigmon, et al. · Applied Physics Letters · 26

Optical Properties of CuGaS2 near the Fundamental Absorption Edge

1973 · J. L. Regolini, S. Lewonczuk, et al. · physica status solidi (b) · 26

Works count: 131

Citation count: 2,112

H-index: 25

I10-index: 54