Work

Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor

Year: 1989

Type: article

Source: Applied Surface Science

DOI: 10.1016/0169-4332(89)90561-8

Authors: J.L. Regolini, D. Bensahel, G. Bomchil, J. Mercier

Institution: Centre National de la Recherche Scientifique

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016296389

FWCI: 2.272

Cites: 5

Cited by: 27

Related to: 10