Work

Silicon selective epitaxial growth at reduced pressure and temperature

Year: 1989

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(89)90045-6

Authors: J.L. Regolini, D. Bensahel, J. Mercier, E. Scheid

Institution: Centre National de la Recherche Scientifique

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000281259

FWCI: 3.69

Cites: 11

Cited by: 29

Related to: 10