Work

Scanning-electron-beam annealing of arsenic-implanted silicon

Year: 1979

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.90816

Authors: J. L. Regolini, J. F. Gibbons, T. W. Sigmon, R. F. W. Pease, T. J. Magee, J. Peng

Institution: Stanford University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2002078377

FWCI: 10.61

Cites: 12

Cited by: 59

Related to: 10