Work

Evolution of domain walls in 6H- and 4H-SiC single crystals

Year: 2002

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(01)02154-6

Authors: D. Siche, H.-J. Rost, J. Doerschel, D. Schulz, J. Wollweber

Institution: Leibniz Institute for Crystal Growth

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Bundesministerium für Bildung und Forschung

OpenAlex ID: W1982935493

FWCI: 1.05

Cites: 6

Cited by: 16

Related to: 10