Work

Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry

Year: 1998

Type: article

Abstract: We have characterized the refractive index of strained GaInNAs layers. Using spectroscopic ellipsometry (SE), the variation in optical constants of GaInNAs layers, about 6 nm thick with a nitrogen content lower than 1%, can be clearly observed. Analysis of the SE data, including the strain effect in the layer, clarified that the refractive index of GaInNAs increases in proportion to the nitrogen content. While the trend for increase in refractive index with a decrease in the bandgap energy is the same as that observed in conventional III–V alloy semiconductors, the rate of increase is found to be much larger than that in GaInAs. This result suggests a large density of states in the conduction band characteristics of this type of material system that includes nitrogen atoms.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.37.753

Authors: Takeshi Kitatani, Masahiko Kondow, Kazunori Shinoda, Yoshiaki Yazawa, Makoto Okai

Institution: Hitachi (Japan)

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1984260010

FWCI: 2.281

Cites: 6

Cited by: 27

Related to: 10