Work

Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide films

Year: 1976

Type: conference-abstract

Source: Journal of Vacuum Science and Technology

DOI: 10.1116/1.568955

Authors: S. I. Raider, R. Flitsch

Institution: IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Electron and X-Ray Spectroscopy Techniques

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1985102802

Cites:

Cited by: 60

Related to: 10