Work

Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition

Year: 1983

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.94408

Authors: M. Razeghi, J. P. Hirtz, U. O. Ziemelis, C. Delalande, B. Etienne, M. Voos

Institutions: Technicolor (France), Thales (France), École Normale Supérieure - PSL

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1985379663

FWCI: 8.054

Cites: 6

Cited by: 98

Related to: 10