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J.P. Hirtz

Observed names: J P Hirtz, J P. Hirtz, J. Hirtz, J. P. HIRTZ, J. P. Hirtz, J.-P. Hirtz, J.P Hirtz, Jean-Pierre Hirtz
OpenAlex ID: A5111775117
Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition
1983 · M. Razeghi, J. P. Hirtz, et al. · Applied Physics Letters · 98
GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications
1981 · J.P. Duchemin, J.P. Hirtz, et al. · Journal of Crystal Growth · 78
The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy
1981 · T.P. Pearsall, J.P. Hirtz · Journal of Crystal Growth · 78
Low-temperature investigations of the quantum Hall effect in InxGa1−xAs−InP heterojunctions
1983 · A. Briggs, Y. Guldner, et al. · Physical review. B, Condensed matter · 71
Precise Quantized Hall Resistance Measurements in GaAs/AlxGa1-xAs and InxGa1-xAs/InP Heterostructures
1986 · F Delahaye, D Dominguez, et al. · Metrologia · 59
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Quantum Hall effect in In0.53 Ga0.47 As-InP heterojunctions with two populated electric subbands
1986 · Y. Guldner, J. P. Vieren, et al. · Physical review. B, Condensed matter · 46
1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy
1989 · P. Galtier, J. P. Pocholle, et al. · Applied Physics Letters · 45
Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes
1999 · E. Martin, J. P. Landesman, et al. · Applied Physics Letters · 40
Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes
2000 · A. V. Andrianov, S. R. A. Dods, et al. · Journal of Applied Physics · 35
Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1−xP
1991 · J. Ch. Garcia, Ph. Maurel, et al. · Journal of Applied Physics · 30
Ga x In 1− x As y P 1− y /InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.
1980 · J.P. Hirtz, J.P. Duchemin, et al. · Electronics Letters · 30
High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications
2008 · J. Van de Casteele, M. Bettiati, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 27
Growth of Ga 0.47 In 0.53 As on InP by low-pressure m.o. c.v.d.
1980 · J.P. Hirtz, J.P. Larivain, et al. · Electronics Letters · 24
Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties
1991 · J.C. Garcia, P. Maurel, et al. · Journal of Crystal Growth · 22
The quantum Hall effect in modulation doped In0.53Ga 0.47As-InP heterojunctions
1982 · Y. Guldner, J.P. Hirtz, et al. · Journal de Physique Lettres · 22
Suppression of D X centers in GaAlAs-GaAs heterostructures
1989 · J. C. Bourgoin, S. L. Feng, et al. · Applied Physics Letters · 18
Room temperature 600 mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE
1993 · Ph. Maurel, J.C. Garcia, et al. · Electronics Letters · 15
GaInAs/InP and GaInP/GaAs (100) interfaces: An ultraviolet photoelectron spectroscopy study
1992 · J. P. Landesman, J. C. Garcia, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 15
Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
1992 · J. P. Landesman, J. C. Garcia, et al. · Applied Physics Letters · 15
Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
1991 · Ph. Bove, J. Ch. Garcia, et al. · Applied Physics Letters · 15
Line resolution in the sub-ten-nanometer range in SAM
1988 · J. Cazaux, J. Chazelas, et al. · Ultramicroscopy · 15
High speed 1.3 μm InGaAs/GaAs superlattice on Si photodetector
1990 · M. Zirngibl, J.C. Bischoff, et al. · Electronics Letters · 14
High-mobility selectively doped GaAs/GaAlAs structures grown by low-pressure OM-VPE
1982 · S.D. Hersee, J.P. Hirtz, et al. · Electronics Letters · 13
Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.23 μm grown by low-pressure metalorganic chemical vapour deposition
1981 · M. Razeghi, J.P. Hirtz, et al. · Electronics Letters · 13
Low pressure MOVPE growth of ZnSe, ZnTe, and ZnSe/ZnTe strained-layer superlattices
1993 · N. Briot, T. Cloitre, et al. · Journal of Electronic Materials · 12
Works count: 78
Citation count: 1,023
H-index: 16
I10-index: 29
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