Work

Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source

Year: 1991

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.105036

Authors: Ph. Bove, J. Ch. Garcia, Ph. Maurel, J. P. Hirtz

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015368167

FWCI: 1.755

Cites: 16

Cited by: 15

Related to: 10