Work

Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures

Year: 1995

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.360586

Authors: B. A. Turkot, D. V. Forbes, I. M. Robertson, J. J. Coleman, L. E. Rehn, M. A. Kirk, P. M. Baldo

Institutions: University of Illinois Urbana-Champaign, Argonne National Laboratory

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Energy, Division of Materials Research, Argonne National Laboratory

OpenAlex ID: W1985403132

FWCI: 2.343

Cites: 16

Cited by: 15

Related to: 10