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B. A. Turkot

Observed names: B. Turkot, B.A. Turkot, Bob Turkot
OpenAlex ID: A5113626121
3-D Self-aligned Stacked NMOS-on-PMOS Nanoribbon Transistors for Continued Moore’s Law Scaling
2020 · C. -Y. Huang, G. Dewey, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 143
FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory
2021 · S. -C. Chang, N. Haratipour, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 54
Enabling Hybrid Bonding on Intel Process
2021 · Adel Elsherbini, Kimin Jun, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 43
A 65nm ultra low power logic platform technology using uni-axial strained silicon transistors
2006 · C.-H. Jan, P. Bai, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 43
CMOS Compatible Process Integration of SOT-MRAM with Heavy-Metal Bi-Layer Bottom Electrode and 10ns Field-Free SOT Switching with STT Assist
2020 · Noriyuki Sato, Gary A. Allen, et al. · Symposium on VLSI Technology · 40
Continuing Moore's law with EUV lithography
2017 · B. Turkot, S. Carson, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 29
Opportunities in 3-D stacked CMOS transistors
2021 · M. Radosavljevic, C.-Y. Huang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD
1994 · T. M. Cockerill, D. V. Forbes, et al. · Journal of Electronic Materials · 22
Depth dependence of ion implantation damage in AlxGa1−xAs/GaAs heterostructures
1996 · B. A. Turkot, B. W. Lagow, et al. · Journal of Applied Physics · 18
A 22nm high performance embedded DRAM SoC technology featuring tri-gate transistors and MIMCAP COB
2013 · R. Brain, A. Baran, et al. · Symposium on VLSI Circuits · 17
Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures
1995 · B. A. Turkot, D. V. Forbes, et al. · Journal of Applied Physics · 15
On the amorphization process in Al0.6Ga0.4As/GaAs heterostructures
1998 · B. A. Turkot, I. M. Robertson, et al. · Journal of Applied Physics · 9
Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms
1998 · B.W. Lagow, B.A. Turkot, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 6
Simple test vehicle for metal fill and resistance of sub-8nm nanowire
2015 · Seung Hoon Sung, Jasmeet Chawla, et al. · IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference (IITC/MAM) · 1
Amorphization mechanisms in Al{sub x}Ga{sub 1{minus}x}As
1997 · B. W. Lagow, B. A. Turkot, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
Amorphization mechanisms in Al{sub x}Ga{sub 1-x}As.
1997 · B. W. Lagow, B. A. Turkot, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
Amorphization Mechanisms in AlxGa1-xAs
1996 · B. W. Lagow, B. A. Turkot, et al. · MRS Proceedings
Amorphization Mechanisms in AlxGa1-xAs
1996 · B. W. Lagow, B. A. Turkot, et al. · MRS Proceedings
Ion Damage Production in GaAs/Al0.6Ga0.4As Heterostructures
1994 · B.A. Turkot, I.M. Robertson, et al. · MRS Proceedings
Ion Damage Studies in GaAs/Al0.6Ga0.4As/GaAs Heterostructures
1993 · B.A. Turkot, D.V. Forbes, et al. · MRS Proceedings
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Works count: 20
Citation count: 467
H-index: 11
I10-index: 11
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