Hot-carrier effects in high magnetic fields in silicon inversion layers at low temperatures: p channel
Year: 1977
Type: article
Source: Physical review. B, Solid state
Authors: Karl Hess, T. Englert, T. Neugebauer, G. Landwehr, G. Dorda
Institutions: University of Vienna, University of Würzburg, Siemens (Germany)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1985752194