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G. Dorda

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
1980 · K. v. Klitzing, G. Dorda, et al. · Physical Review Letters · 7,109
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Hot-electron and hole-emission effects in short n-channel MOSFET's
1985 · K.R. Hofmann, C. Werner, et al. · IEEE Transactions on Electron Devices · 314
Cyclotron resonance of electrons in surface space-charge layers on silicon
1976 · Gerhard Abstreiter, J. P. Kotthaus, et al. · Physical review. B, Solid state · 189
New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
1989 · K. v. Klitzing, G. Dorda, et al. · Perspectives in condensed matter physics · 138
Resonance Spectroscopy of Electronic Levels in a Surface Accumulation Layer
1974 · A. Kamgar, P. Kneschaurek, et al. · Physical Review Letters · 116
Piezoresistance in Quantized Conduction Bands in Silicon Inversion Layers
1971 · G. Dorda · Journal of Applied Physics · 114
Surface quantum oscillations in (110) and (111) n-type silicon inversion layers
1975 · T. Neugebauer, K. von Klitzing, et al. · Solid State Communications · 85
Generation of interface states by hot hole injection in MOSFET's
1982 · H. Gesch, J.-P. Leburton, et al. · IEEE Transactions on Electron Devices · 81
Degradation of n-MOS-Transistors after pulsed stress
1984 · W. Weber, C. Werner, et al. · IEEE Electron Device Letters · 66
Shubnikov-de Haas oscillations in p-type inversion layers on n-type silicon
1974 · K. von Klitzing, G. Landwehr, et al. · Solid State Communications · 61
Many-valley interactions in n -type silicon inversion layers
1978 · G. Dorda, I. Eisele, et al. · Physical review. B, Condensed matter · 46
Interface states in MOSFETs due to hot-electron injection determined by the charge pumping technique
1981 · D. Schmitt, G. Dorda · Electronics Letters · 42
Tunnel mechanism in MNOS structures
1970 · G. Dorda, M. Pulver · physica status solidi (a) · 42
Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistors
1974 · K. von Klitzing, G. Landwehr, et al. · Solid State Communications · 41
Negative Magnetoresistance in n -Channel (100) Silicon Inversion Layers
1974 · I. Eisele, G. Dorda · Physical Review Letters · 34
Valley degeneracy and mobility anisotropy under mechanical stress on (111) silicon inversion layers
1976 · G. Dorda, H. Gesch, et al. · Solid State Communications · 32
Hot-carrier effects in high magnetic fields in silicon inversion layers at low temperatures: p channel
1977 · Karl Hess, T. Englert, et al. · Physical review. B, Solid state · 31
On the Electronic g‐Faetor in n‐Type Silicon Inversion Layers
1980 · Th. Englert, K. von Klitzing, et al. · physica status solidi (b) · 30
Evidence for mobility domains in (100) silicon inversion layers
1976 · I. Eisele, H. Gesch, et al. · Solid State Communications · 28
Effective masses in (100) silicon inversion layers
1977 · I. Eisele, H. Gesch, et al. · Solid State Communications · 26
Effective Mass Change of Electrons in Silicon Inversion Layers Observed by Piezoresistance
1970 · G. Dorda · Applied Physics Letters · 26
High Precision Measurements of the Quantized Hall Resistance at the PTB
1985 · Leendert Bliek, Erich Braun, et al. · IEEE Transactions on Instrumentation and Measurement · 25
Positive and negative charge generation by hot carriers in n -MOSFETs
1983 · B. Borchert, K.R. Hofmann, et al. · Electronics Letters · 25
Hot-electron effects on short-channel MOSFETs determined by the piezoresistance effect
1988 · B. Borchert, G.E. Dorda · IEEE Transactions on Electron Devices · 23
Comments on the hole mass in silicon inversion layers
1976 · G. Landwehr, E. Bangert, et al. · Solid State Communications · 23
Works count: 100
Citation count: 9,200
H-index: 23
I10-index: 45
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