Work

Generation of interface states by hot hole injection in MOSFET's

Year: 1982

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1982.20799

Authors: H. Gesch, J.-P. Leburton, G.E. Dorda

Institution: Siemens (Germany)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1982959651

FWCI: 8.168

Cites: 25

Cited by: 81

Related to: 10