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H. Gesch

Observed name: Gesch, H.
OpenAlex ID: A5045429032
Generation of interface states by hot hole injection in MOSFET's
1982 · H. Gesch, J.-P. Leburton, et al. · IEEE Transactions on Electron Devices · 81
Many-valley interactions in n -type silicon inversion layers
1978 · G. Dorda, I. Eisele, et al. · Physical review. B, Condensed matter · 46
Valley degeneracy and mobility anisotropy under mechanical stress on (111) silicon inversion layers
1976 · G. Dorda, H. Gesch, et al. · Solid State Communications · 32
Evidence for mobility domains in (100) silicon inversion layers
1976 · I. Eisele, H. Gesch, et al. · Solid State Communications · 28
Effective masses in (100) silicon inversion layers
1977 · I. Eisele, H. Gesch, et al. · Solid State Communications · 26
Surface quantum oscillations in (100) inversion layers under uniaxial stress
1976 · I. Eisele, H. Gesch, et al. · Solid State Communications · 22
Mechanical stress influence on effective masses in Si inversion layers
1976 · I. Eisele, H. Gesch, et al. · Surface Science · 21
Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressure
1978 · Th. Englert, G. Landwehr, et al. · Physical review. B, Condensed matter · 17
Analytical approach of hot electron transport in small size MOSFET's
1981 · J.P. Leburton, H. Gesch, et al. · Solid-State Electronics · 16
Pressure dependence of structure in the mobility of (100) silicon inversion layers
1978 · H. Gesch, I. Eisele, et al. · Surface Science · 9
Performance comparison of highly integrated circuits: Silicon NMOS versus gallium arsenide normally-off MESFET technology
1983 · H. Gesch, W. Kellner, et al. · IEEE Transactions on Electron Devices · 7
Anomalous behaviour of the electron transport on (110) and (111) silicon surfaces
1980 · G. Dorda, H. Gesch, et al. · Surface Science · 6
Comparison of Shubnikov-de Haas effect and cyclotron resonance on Si(100) MOS transistors under uniaxial stress
1979 · H. Gesch, G. Dorda, et al. · Solid State Communications · 6
Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressure
1978 · Th. Enllert, G. Landwehr, et al. · Surface Science · 1
LOCALIZATION OF HOT ELECTRON INJECTION INTO THE OXIDE OF MOSFET's.
1981 · H. Gesch, Jean‐Pierre Leburton, et al.
Anomalous behaviour of the electron transport on (110) and (111) silicon surfaces
1980 · G. Dorda, H. Gesch, et al. · Surface Science Letters
Works count: 17
Citation count: 318
H-index: 9
I10-index: 9
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