Work

Mechanical stress influence on effective masses in Si inversion layers

Year: 1976

Type: article

Source: Surface Science

DOI: 10.1016/0039-6028(76)90130-8

Authors: I. Eisele, H. Gesch, G. Dorda

Institution: Siemens (Germany)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Technische Universität München

OpenAlex ID: W2015470943

FWCI: 3.872

Cites: 8

Cited by: 21

Related to: 10